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Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Title
Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy
Authors
Phark S.-H.Kim H.Song K.M.Kang P.G.Shin H.S.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2011
Journal Title
Journal of Nanoscience and Nanotechnology
ISSN
1533-4880JCR Link
Citation
vol. 11, no. 2, pp. 1413 - 1416
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions. Copyright © 2011 American Scientific Publishers All rights reserved.
DOI
10.1166/jnn.2011.3396
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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