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Interface engineering in quasi-magnetic tunnel junctions with an organic barrier

Title
Interface engineering in quasi-magnetic tunnel junctions with an organic barrier
Authors
Choi D.J.Lee N.J.Kim T.H.
Ewha Authors
김태희
SCOPUS Author ID
김태희scopus
Issue Date
2010
Journal Title
Journal of Magnetics
ISSN
1226-1750JCR Link
Citation
vol. 15, no. 4, pp. 185 - 189
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO. © 2010 Journal of Magnetics.
DOI
10.4283/JMAG.2010.15.4.185
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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