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Control of defect-mediated tunneling barrier heights in ultrathin MgO films

Title
Control of defect-mediated tunneling barrier heights in ultrathin MgO films
Authors
Kim D.J.Choi W.S.Schleicher F.Shin R.H.Boukari S.Davesne V.Kieber C.Arabski J.Schmerber G.Beaurepaire E.Jo W.Bowen M.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2010
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 97, no. 26
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O2 to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers. © 2010 American Institute of Physics.
DOI
10.1063/1.3531652
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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