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Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions

Title
Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions
Authors
Gwon M.Lee E.Sohn A.Bourim E.M.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2010
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 57, no. 6, pp. 1432 - 1436
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.
DOI
10.3938/jkps.57.1432
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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