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Current transport in Pt Schottky contacts to a-plane n-type GaN

Title
Current transport in Pt Schottky contacts to a-plane n-type GaN
Authors
Phark S.-H.Kim H.Song K.M.Kang P.G.Shin H.S.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2010
Journal Title
Journal of Physics D: Applied Physics
ISSN
0022-3727JCR Link
Citation
vol. 43, no. 16
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The temperature-dependent electrical properties of Pt Schottky contacts to nonpolar a-plane n-type GaN were investigated. Barrier height and ideality factor, estimated from the conventional thermionic emission model, were highly temperature dependent. A notable deviation from the theoretical Richardson constant value was also observed in the conventional Richardson plot. Analyses using the thermionic field emission model showed that consideration of defect-assisted tunnelling was necessary to explain the observed electrical behaviours. © 2010 IOP Publishing Ltd.
DOI
10.1088/0022-3727/43/16/165102
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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