NL repository
menu
검색
Library
Browse
Communities & Collections
By Date
Authors
Titles
Subject
My Repository
My Account
Receive email updates
Edit Profile
DSpace at EWHA
자연과학대학
물리학전공
Journal papers
View : 581 Download: 0
Current transport in Pt Schottky contacts to a-plane n-type GaN
Title
Current transport in Pt Schottky contacts to a-plane n-type GaN
Authors
Phark S.-H.
;
Kim H.
;
Song K.M.
;
Kang P.G.
;
Shin H.S.
;
Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱
Issue Date
2010
Journal Title
Journal of Physics D: Applied Physics
ISSN
0022-3727
Citation
Journal of Physics D: Applied Physics vol. 43, no. 16
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
The temperature-dependent electrical properties of Pt Schottky contacts to nonpolar a-plane n-type GaN were investigated. Barrier height and ideality factor, estimated from the conventional thermionic emission model, were highly temperature dependent. A notable deviation from the theoretical Richardson constant value was also observed in the conventional Richardson plot. Analyses using the thermionic field emission model showed that consideration of defect-assisted tunnelling was necessary to explain the observed electrical behaviours. © 2010 IOP Publishing Ltd.
DOI
10.1088/0022-3727/43/16/165102
Appears in Collections:
자연과학대학
>
물리학전공
>
Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show full item record
Find@EWHA
트윗하기
BROWSE
Communities & Collections
By Date
Authors
Titles
Subject