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Influences of interface states on the electrical properties of Pt/SrTiO3 junctions

Title
Influences of interface states on the electrical properties of Pt/SrTiO3 junctions
Authors
Lee S.Phark S.-H.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2010
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 56, no. 12, pp. 362 - 365
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 - 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.
DOI
10.3938/jkps.56.362
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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