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dc.contributor.author윤석현-
dc.date.accessioned2016-08-28T12:08:26Z-
dc.date.available2016-08-28T12:08:26Z-
dc.date.issued2009-
dc.identifier.issn0374-4884-
dc.identifier.otherOAK-5987-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/220296-
dc.description.abstractWe report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.-
dc.languageEnglish-
dc.titleUltra-violet resonant Raman scattering studies of dilute GaPN alloys-
dc.typeArticle-
dc.relation.issue4-
dc.relation.volume55-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.indexKCI-
dc.relation.startpage1563-
dc.relation.lastpage1567-
dc.relation.journaltitleJournal of the Korean Physical Society-
dc.identifier.doi10.3938/jkps.55.1563-
dc.identifier.wosidWOS:000270890500040-
dc.identifier.scopusid2-s2.0-72149130566-
dc.author.googleYoon S.-
dc.contributor.scopusid윤석현(55732105900)-
dc.date.modifydate20170601133049-
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자연과학대학 > 물리학전공 > Journal papers
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