DSpace at EWHA: Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

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DC Field	Value	Language
dc.contributor.author	윤석현	*
dc.date.accessioned	2016-08-28T12:08:26Z	-
dc.date.available	2016-08-28T12:08:26Z	-
dc.date.issued	2009	*
dc.identifier.issn	0374-4884	*
dc.identifier.other	OAK-5987	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/220296	-
dc.description.abstract	We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.	*
dc.language	English	*
dc.title	Ultra-violet resonant Raman scattering studies of dilute GaPN alloys	*
dc.type	Article	*
dc.relation.issue	4	*
dc.relation.volume	55	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	1563	*
dc.relation.lastpage	1567	*
dc.relation.journaltitle	Journal of the Korean Physical Society	*
dc.identifier.doi	10.3938/jkps.55.1563	*
dc.identifier.wosid	WOS:000270890500040	*
dc.identifier.scopusid	2-s2.0-72149130566	*
dc.author.google	Yoon S.	*
dc.contributor.scopusid	윤석현(55732105900)	*
dc.date.modifydate	20231120162901	*