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Ultra-violet resonant Raman scattering studies of dilute GaPN alloys

Title
Ultra-violet resonant Raman scattering studies of dilute GaPN alloys
Authors
Yoon S.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2009
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 55, no. 4, pp. 1563 - 1567
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.
DOI
10.3938/jkps.55.1563
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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