Journal of the Korean Physical Society vol. 55, no. 4, pp. 1563 - 1567
SCIE; SCOPUS; KCI
We report a resonant Raman scattering study of GaP1-xN x in the ultraviolet spectral range. A strong intensity resonance near the E1 transition energy exhibiting a zone-center longitudinal optical phonon provides evidence that the L-point conduction band edge of GaP1-xNx is strongly perturbed by nitrogen isoelectronic impurities and slowly moves up in energy with increasing nitrogen concentration. This result, combined with results of previous studies, strongly suggests that GaP1-xNx is best described as an impurity band system.