View : 561 Download: 0

Full metadata record

DC Field Value Language
dc.contributor.author김성진*
dc.date.accessioned2016-08-28T11:08:30Z-
dc.date.available2016-08-28T11:08:30Z-
dc.date.issued2003*
dc.identifier.issn0022-4596*
dc.identifier.otherOAK-1688*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/219324-
dc.description.abstractA new Zintl phase Ba3Ga4Sb5 was obtained from the reaction of Ba and Sb in excess Ga flux at 1000°C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3)Å, b=4.5085(9)Å, c=24.374(5)Å and Z=4. Ba 3Ga4Sb5 has a three-dimensional [Ga 4Sb5]6- framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb3Ga-GaSb3 units and GaSb4 tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions. © 2003 Elsevier Inc. All rights reserved.*
dc.languageEnglish*
dc.titleGa-Ga bonding and tunnel framework in the new Zintl phase Ba 3Ga4Sb5*
dc.typeArticle*
dc.relation.issue2*
dc.relation.volume175*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage310*
dc.relation.lastpage315*
dc.relation.journaltitleJournal of Solid State Chemistry*
dc.identifier.doi10.1016/S0022-4596(03)00293-7*
dc.identifier.wosidWOS:000186126600024*
dc.identifier.scopusid2-s2.0-0141922851*
dc.author.googlePark S.-M.*
dc.author.googleKim S.-J.*
dc.author.googleKanatzidis M.G.*
dc.contributor.scopusid김성진(56812714700)*
dc.date.modifydate20240301081003*
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

BROWSE