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Channel length independent subthreshold characteristics in submicron MOSFET's

Title
Channel length independent subthreshold characteristics in submicron MOSFET's
Authors
Shin H.S.Lee C.Hwang S.W.Park B.G.Park Y.J.Min H.S.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
1998
Journal Title
IEEE Electron Device Letters
ISSN
0741-3106JCR Link
Citation
vol. 19, no. 4, pp. 137 - 139
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
This letter reports an anomalous subthreshold characteristic of MOSFET for the first time. It is observed that the subthreshold characteristic does not change as the channel length decreases. The cause of channel length independent subthreshold characteristics is identified as the localized pileup of channel dopants near the source and drain ends of the channel. The low surface potential of this pileup region limits the subthreshold current of MOSFET. As a result, the ratio of on-current to off-current for this MOSFET increases as the channel length is reduced, which is an important parameter for low-voltage operation. It is found that a MOSFET with channel length independent subthreshold characteristic is more suitable for low-voltage operation.
DOI
10.1109/55.663539
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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