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Indium substitution effect on thermoelectric and optical properties of Sn1-xInxSe compounds

Title
Indium substitution effect on thermoelectric and optical properties of Sn1-xInxSe compounds
Authors
Kim J.H.Oh S.Kim Y.M.So H.S.Lee H.Rhyee J.-S.Park S.-D.Kim S.-J.
Ewha Authors
김성진
SCOPUS Author ID
김성진scopus
Issue Date
2016
Journal Title
Journal of Alloys and Compounds
ISSN
0925-8388JCR Link
Citation
vol. 682, pp. 785 - 790
Keywords
Band renormalizationHybridizationSnSeThermoelectric
Publisher
Elsevier Ltd
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Recent investigations of the high thermoelectric figure-of-merit ZT of 2.6 for SnSe crystalline compound demonstrated the state-of-the-art highest thermoelectric performance in spite of the high ZT value in a narrow temperature range and along a specified crystallographic direction. We investigated the thermoelectric properties of polycrystalline Sn1-x InxSe (x = 0.0, 0.01, 0.05, and 0.1) compounds and the optical properties of single crystalline compounds. Sn1-x InxSe exhibits increased electrical resistivity, an increase in the Seebeck coefficient and band gap energies, and a significant decrease in the Hall mobility with an increase in the In-doping concentration, whereas the Hall carrier density does not changed significantly. These abnormal results and the decrease in the lattice volume with an increase in the In-doping concentration strongly imply the existence of band renormalization by In 4d- and Se 4p-orbital hybridization. We argue that the significant flat bands by band renormalization induce significantly decreased Hall mobility and increases in the electrical resistivity and Seebeck coefficient, resulting in the deterioration of the thermoelectric properties. © 2016 Elsevier B.V. All rights reserved.
DOI
10.1016/j.jallcom.2016.04.308
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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