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Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction

Title
Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
Authors
Kim, HogyoungKim, Se HyunJung, Chan YeongCho, YunaeKim, Dong-Wook
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2015
Journal Title
VACUUM
ISSN
0042-207XJCR Link
Citation
vol. 121, pp. 125 - 128
Keywords
Current transportBarrier inhomogeneityRichardson constant
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm(-2) K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm(-2) K-2 for n-type Ge. Reverse current analysis revealed that Poole Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.vacuum.2015.08.011
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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