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Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
- Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
- Kim, Hogyoung; Kim, Se Hyun; Jung, Chan Yeong; Cho, Yunae; Kim, Dong-Wook
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- vol. 121, pp. 125 - 128
- Current transport; Barrier inhomogeneity; Richardson constant
- PERGAMON-ELSEVIER SCIENCE LTD
- SCI; SCIE; SCOPUS
- We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm(-2) K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm(-2) K-2 for n-type Ge. Reverse current analysis revealed that Poole Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
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