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비정질 반도체의 A. C. conductivity의 주파수 의존성

Title
비정질 반도체의 A. C. conductivity의 주파수 의존성
Other Titles
(A) Study of the Amorphous Semiconductor of AC Conductivity depends upon the frequency
Authors
朴貞玉
Issue Date
1985
Department/Major
교육대학원 과학교육전공물리교육분야
Keywords
비정질반도체A. C. conductivity주파수의존성
Publisher
이화여자대학교 교육대학원
Degree
Master
Advisors
이종록
Abstract
One Amorphous AS_(2)Te_(3), samples have been obtained by mixing the Ⅵ group of the element Te, the principal element with the Ⅴ group of the element As at the ratio of 6:4, the other Amorphous Te_(2)AsSi samples have been obtained by mixing the Ⅵ group of the element Te, the principal element with the Ⅳ group of the element Si and V group of the element As at the ratio of 5:2.5;2.5. When these samples were put to X-ray diffraction test under the condition of scanned diffraction angle in range 2θ=20˚ - 150˚ and they proved to be noncrystalline. When these samples were out in frequency which ranged from 10^(3) to 10^(9) HZ under the condition of fixed temperature 15℃, AC conductivity of them increase in proportion to frequency and the slope was about 0.8. The relation of frequency and AC conductivity was exceptionally constant in range of radio cycle. And when these samples were put in temperature which ranged from 150℃ to-75℃ under the condition of fixed 1KHz, 10KHz, 100KHz, AC conductivity measure as frequency decrease temperature also decrease, AC Conductivity was reduced.;Ⅵ족 원소 Te을 주성분으로 여기에 Ⅴ족 원소 As를 6 : 4로 혼합하여 As_(2)Te_(3)와 Ⅳ족 원소 Si, Ⅴ족 원소 As를 5:25:25로 혼합하여 Te_(2)AsSi인 비정질 반도체를 만들었다. As_(2)Te_(3)과 Te_(2)AsSi은 회절각 2θ=20˚∼150˚에서 X선 회절 실험을 해 본 결과 비정질임이 확인 되었고, 이들 시료의 온도를 15℃로 고정해 두고, 주파수를 10^(3)∼10^(9)HZ로 바꾸어 AC Conductivity을 측정 한 결과 Radio파 영역에서는 대개 일정하였으나 주파수가 더 커지면 conductivity는 주파수에 비례하여 증가하였고 그 기울기는 약 0.8이 되었으며 또 주파수를, IKHZ, IOKHZ, IOOKHZ로 고정시켜 놓고 온도를 150℃∼ -75℃로 바꾸면서 AC Conductivity를 측정해 본 결과 주파수가 작을수록, 온도가 낮아질수록 AC Conductivity는 감소됨을 알 수 있었다.
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