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2MTJ-1T Structure Cell and A Novel Sensing Circuit for Synchronous MRAM

2MTJ-1T Structure Cell and A Novel Sensing Circuit for Synchronous MRAM
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과학기술대학원 정보통신학과
이화여자대학교 과학기술대학원
MRAM은 비휘발성, 반영구적인 수명과 low power, low supply voltage, high density, high voltage 등의 장점으로 인해 현재 활발한 연구가 진행 중이다. MRAM architecture는 Giant Magneto Resistance(GMR) cell에 기반을 두고 있는데, GMR 자체의 고유특성으로 인해 상용화된 DRAM이나 MRAM의 sense amplifier의 구조를 그대로 채택할 수 없다. 따라서 MRAM cell의 동작검증을 위한 MTJ structure를 기반으로 한 몇 가지 MRAM prototype이 알려져 있으나 이것들은 기존의 DRAM이나 SRAM에서 가능하던 high speed synchronous read-out을 위한 page-mode operation과 같은 동작은 불가능하다. 따라서 본 논문에서는 MOS transistor의 V_g 조절을 통해 stable한 operation 이 가능하고, 또한 DRAM에서와 마찬가지로 1~2 column pitch에 layout이 가능하여synchronous MRAM을 가능케 하는 작은 size의 sensing circuit을 제안한다. ; This paper presents 2MTJ-1T cell structure and sensing circuit suitable for this structure. In the case of 2MTJ-1T structure cell, it has the several advantages of established 2MTJ-2T cell, and also it is possible to reduce the cell size which is the demerit of 2MTJ-2T cell. In addition to that, 2MTJ-1T cell structure reduces the offset generated in the process of sensing and makes it easy to supply the write current. The sensing circuit suitable for this structure is simple in comparison to the existing circuits. By means of limiting control signal voltage, it is possible to use the sensing circuit similar to that of DRAM in consideration of several characteristics of magnetoresistance. This sensing circuit has a same structure as that of DRAM with the exception of the current source and one additional transistor for current loop. This sensing circuit has considerably small size, so it is suitable for synchronous operation.
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