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Ge-As-Se 비정질 반도체의 전기적특성

Title
Ge-As-Se 비정질 반도체의 전기적특성
Other Titles
ELECTRICAL PROPERITIES OF Ge-As-Se AMORPHOUS SEMICONDUCTOR
Authors
김혜영
Issue Date
1985
Department/Major
교육대학원 과학교육전공물리교육분야
Keywords
Ge-As-Se비정질반도체전기적특성
Publisher
이화여자대학교 교육대학원
Degree
Master
Abstract
Se, the element of group Ⅵ and Ge, As which are the elements of group Ⅳ, Ⅴ are mixed by composition ratio, and were made four kinds of Ge-As-Se chalcogenide amorphous semiconductors (Ge_(40) As_(20) Se_(40) Ge_(35) As_(23) Se_(42), Ge_(30) As_(25) Se_(45), Ge_(20) As_(30) Se_(50)) Each sample was made into the form of thin film by the method of vacuum evaporation. By the result of X-ray diffraction experiment, it was confined that each sample was amorphous substance. Al electrodes were pasted by use 2-probe method and the conductivity of each sample was calculated by measuring the change of current with temperature in vacuum at temperature range between 393K and 208K. These results were analyzed by Davis-Mott Model.D.C. Conductivities were proportional to reciprocal temperature above the room temperature, and satisfied the relation σ=σ_(0) exp(-ΔE_(0)/kT) Conductivities obtained were 8.06×10^(-4) - 1.20×10^(-8)Ω^(-1)cm^(-1)a;Ⅵ족 원소인 Se에 Ⅳ, Ⅴ족 원소인 Ge, As을 중량비율대로 혼합하여 Ge-As-Se 으로 된 4종의 chalcogenide 비정질 반도체(Ge_(40)As_(20)Se_(40), Ge_(35)As_(23)Se_(42), Ge_(30)As_(23)Se_(45), Ge_(20)As_(30)Se_(50))를 제작하였다. 각 sample은 진공 증착하여 박막 형태로 만들었다. X-선 회절 실험 결과 각 sample은 비정질임이 확인되었다. 2-탐침법으로 Al 전극을 부착하고 393K∼208K의 온도 범위에서 각 sample의 온도에 따른 전류의 변화를 진공속에서 측정하여 직류 전기 전도도를 계산하였다. 결과는 Davis-Mott Mode1에 따라 분석하였다. 상온 이상의 온도 범위에서 직류 전기 전도도는 온도의 역수에 비례하여 대체로 σ=σ_(0)exp(-ΔE_(0)/kT)의 관계식을 만족하였고, 그 값은 8.06×10^(-4)∼1.20×10^(-8) Ω^(-1)㎝^(-1)였다.
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