2002 | An anomalous device degradation of SOI narrow width devices caused by STI edge influence | 신형순 | Article |
2023 | An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network | 신형순; 박지선; 조성재 | Article |
2003 | An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect | 신형순 | Conference Paper |
2004 | An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs | 신형순 | Conference Paper |
2004 | Analysis of Threshold Voltage Variation Due to the Quantum Effects in MOSFETs | 이지은 | Master's Thesis |
2004 | Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method | 신형순 | Article |
2020 | Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM | 신형순 | Article |
2019 | Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method | 신형순 | Article |
2021 | Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation | 신형순 | Conference Paper |
2005 | Analysis of I-MOS (Impact- Ionization MOS) Characteristics using Device Simulator | 이상경 | Master's Thesis |
2019 | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | 신형순; 선우경 | Article |
2019 | Analysis of Optimized Read/Write Operation in 3D Vertical Resistive Random Access Memory (VRRAM) | 최수진 | Doctoral Thesis |
2020 | Analysis of Organic Light-Emitting Diode SPICE Models with Constant or Voltage-Dependent Components | 신형순; 박지선 | Article |
2018 | Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array | 신형순; 선우경 | Article |
2018 | Analysis of read margin of crossbar array according to selector and resistor variation | 신형순; 선우경 | Conference Paper |
2016 | Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential | 신형순 | Article |
2015 | Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential | 신형순 | Article |
2002 | Analysis of the accuracy of the local thermal noise sources for the impedance field method using the Monte Carlo method | 신형순 | Conference Paper |
2016 | Analysis of the effect of the density of states on the characteristics of thin-film transistors | 신형순 | Conference Paper |
2019 | Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems | 신형순; 선우경 | Article |
2020 | Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
2016 | Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs | 신형순 | Article |
2004 | Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs | 신형순 | Article; Proceedings Paper |
2021 | Analysis of the transient body effect model for an LTPS TFT on a plastic substrate | 신형순; 박지선 | Article |
2020 | Analysis of the transient characteristics of poly-Si 1T-DRAM | 김현정 | Master's Thesis |
2014 | Analysis of Uniaxial Strain Technologies for Electron Mobility Enhancement using Self-Consistent Poisson-Schrödinger Equation Solver | 선우경 | Doctoral Thesis |
2013 | Analytic model of spin-torque oscillators (STO) for circuit-level simul | 신형순; 이승준 | Article |
2002 | Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology | 신형순 | Article |
2020 | Analytical Model of Poly-Si channel SOI-JLFET | 정용진 | Master's Thesis |
2016 | Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region | 신형순 | Article |